PNP Epitaxial Planar Silicon Transistor for ultrahigh-definition CRT display and video output applications, in a TO-126 package measuring 8.0 mm × 4.0 mm × 5.1 mm, with a collector-to-emitter breakdown voltage of 200 V, collector current rating of 100 mA, and gain-bandwidth product of 400 MHz; hFE is classified in the D range from 60 to 120 at IC = 10 mA. Complementary NPN counterpart is 2SC3600.
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PNP Epitaxial Planar Silicon Transistor for ultrahigh-definition CRT display and video output applications, in a TO-126 package measuring 8.0 mm × 4.0 mm × 5.1 mm, with a collector-to-emitter breakdown voltage of 200 V, collector current rating of 100 mA, and gain-bandwidth product of 400 MHz; hFE is classified in the D range from 60 to 120 at IC = 10 mA. Complementary NPN counterpart is 2SC3600.
