onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SA1381E

The 2SA1381 is a PNP silicon bipolar junction transistor designed for high-definition CRT display and video output applications. It is packaged in a TO-126 case with dimensions of 8.0 mm × 4.0 mm × 5.1 mm, featuring a 3-pin layout. The device has a collector-to-base voltage rating of 300 V, collector-to-emitter voltage of 300 V, and a continuous collector current of 100 mA, with a pulse current tolerance of 200 mA. Power dissipation is rated at 7 W at Tc=25°C. The transistor exhibits a minimum hFE of 100 and a typical gain-bandwidth product of 150 MHz. Reverse transfer capacitance is 2.3 pF at VCB=30 V and f=1 MHz. It meets the JIS C 7012 standard for TO-126 packaging and is qualified for operation across a junction temperature range of -55°C to +150°C.