onsemi 2SA1371E

Description
Small Signal Bipolar Transistor, 0.1A, 300V, PNP, TO-226
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Description
Small Signal Bipolar Transistor, 0.1A, 300V, PNP, TO-226
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Datasheet
Datasheet Summary
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PNP silicon transistor for high-definition CRT video output applications, with a collector-to-base voltage rating of 300 V, collector current of 100 mA, and power dissipation of 1.0 W. The device features a reverse transfer capacitance of 2.3 pF and a gain-bandwidth product of 150 MHz, housed in a TO-226 package with dimensions 6.0 x 5.0 x 1.45 mm. The hFE is classified in bins from 40 to 320, with the E grade specifying 100 to 200 at IC = 10 mA.

Datasheet Summary
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PNP silicon transistor for high-definition CRT video output applications, with a collector-to-base voltage rating of 300 V, collector current of 100 mA, and power dissipation of 1.0 W. The device features a reverse transfer capacitance of 2.3 pF and a gain-bandwidth product of 150 MHz, housed in a TO-226 package with dimensions 6.0 x 5.0 x 1.45 mm. The hFE is classified in bins from 40 to 320, with the E grade specifying 100 to 200 at IC = 10 mA.

Suppliers

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Product
Description
Supplier Links
 - 2SA1371E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 300V, PNP, TO-226

Small Signal Bipolar Transistor, 0.1A, 300V, PNP, TO-226

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SA1371E
Polarity PNP
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