onsemi 2SA1208T

PNP epitaxial planar silicon transistor for high-voltage switching and audio predriver applications, housed in a 3-pin MP package with dimensions of 6.0 mm × 5.0 mm × 5.8 mm. It has a collector-to-base breakdown voltage of 180 V, collector-to-emitter voltage of 160 V, and maximum collector current of 70 mA. Collector dissipation is rated at 900 mW, with a maximum junction temperature of 150 °C. The device exhibits a DC current gain (hFE) range of 200 to 400 for the T grade, a gain-bandwidth product of 150 MHz, and switching times of 0.1 µs turn-on and 0.2 µs fall time. Output capacitance is 2.0 pF at 1 MHz.