onsemi 2SA1208S-AE

2SA1208S-AE is a PNP epitaxial planar silicon transistor for high-voltage switching and audio predriver applications, part of a series using the FBET process with high breakdown voltage and fast switching. It is packaged in a 6.0 × 5.0 × 0.5 mm case with three pins: emitter, collector, base. Maximum ratings include -180 V collector-to-base voltage, -160 V collector-to-emitter voltage, 70 mA continuous collector current, and 900 mW power dissipation. Junction temperature ranges from -55°C to 150°C. DCCurrent gain (hFE) at -10 mA is ranked R: 100-200. Switching times are 0.1 µs turn-on, 0.2 µs fall, and 1.0 µs storage. Output capacitance is 2.5 pF at -10 V. The series is not intended for life-support or critical reliability systems.