onsemi 2SA1207T-AA

PNP epitaxial planar silicon transistor for high-voltage switching and AF 60W predriver applications, packaged in a 3-pin SANYO NP case with dimensions of 6.0 mm × 5.0 mm × 1.3 mm. Features a collector-to-base voltage rating of −180 V, collector-to-emitter voltage of −160 V, and maximum collector dissipation of 600 mW. Junction temperature is rated to 150 °C. Gain-bandwidth product is 150 MHz, output capacitance is 2.0 pF, and switching times are 0.1 µs turn-on, 0.2 µs fall, and 1.0 µs storage. Classified with hFE ranges based on test conditions. Meets RoHS and AEC-Q200 standards.