onsemi 2SA1179-6-TB-E

PNP epitaxial planar silicon transistor for low-frequency general-purpose amplifier applications, housed in a miniature CP package measuring 5.2 mm in length and 3.0 mm in width. Rated for a collector-to-emitter voltage of 50 V, collector current of 150 mA, and collector dissipation of 200 mW. DC current gain (hFE) ranges from 200 to 400 for the 6-rank variant, with a gain-bandwidth product of 180 MHz at VCE = -6 V and IC = -10 mA. Junction temperature range is -55 to 150 °C.