onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 2N7002ET7G

Description
Win Source Part Number: 1352989-2N7002ET7G Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Base Product Number: 2N7002 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Power Dissipation (Max): 300mW (Tj) Mounting Type: Surface Mount HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1352989-2N7002ET7G Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Base Product Number: 2N7002 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Power Dissipation (Max): 300mW (Tj) Mounting Type: Surface Mount HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1352989-2N7002ET7G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1352989-2N7002ET7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1352989-2N7002ET7G
Win Source Part Number: 1352989-2N7002ET7G Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Tape & Reel Product Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Base Product Number: 2N7002 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Power Dissipation (Max): 300mW (Tj) Mounting Type: Surface Mount HTSUS: 8541.21.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1352989-2N7002ET7G
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Product Number: 2N7002
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Power Dissipation (Max): 300mW (Tj)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Single FETs, MOSFETs - 488-2N7002ET7GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-2N7002ET7GDKR-ND
Single FETs, MOSFETs 488-2N7002ET7GDKR-ND
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 488-2N7002ET7GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-2N7002ET7GTR-ND
Single FETs, MOSFETs 488-2N7002ET7GTR-ND
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 488-2N7002ET7GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-2N7002ET7GCT-ND
Single FETs, MOSFETs 488-2N7002ET7GCT-ND
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002ET7G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002ET7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002ET7G
MOSFET N-CH 60V 260MA SOT23-3

MOSFET N-CH 60V 260MA SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET SOT23 60V 115MA 7MO

MOSFET NFET SOT23 60V 115MA 7MO

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.26A, Sot-23; Channel Type Onsemi - 85AC3102 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.26A, Sot-23; Channel Type Onsemi
85AC3102
Mosfet, N-Ch, 60V, 0.26A, Sot-23; Channel Type Onsemi 85AC3102
MOSFET, N-CH, 60V, 0.26A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:260mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.26A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:260mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1352989-2N7002ET7G 488-2N7002ET7GDKR-ND 2N7002ET7G 2N7002ET7G 85AC3102
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.26A, Sot-23; Channel Type Onsemi
Polarity N-Channel N-Channel
PD 300 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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