onsemi N-Channel 60V 310mA MOSFET Transistor 2N7002ET7G

N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, 3500-REEL Product overview: 2N7002ET7G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 310mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 310mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002ET7G can be used for catalog matching and distributor lookup.

Win Source Part Number: 1352989-2N7002ET7G
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Product Number: 2N7002
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Power Dissipation (Max): 300mW (Tj)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)