N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 60V 260mA SOT-23 2.5R T/R Product overview: 2N7002ET1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 260mA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 260mA, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002ET1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 260MA SOT23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 005720-2N7002ET1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Tj)
Family Name: 2N7002E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 260mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.81nC @ 5V
Max Input Capacitance: 26.7pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 240mA, 10V
Alternative Parts (Cross-Reference): ZVN4106FTA; SSM3K7002F; TSM2N7002ECXRF;
Introduction Date: April 03, 2007
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Consumer Electronics
MOSFET NFET SOT23 60V 310mA 2.5Ohms
60V 260mA 300mW 2.5Ω@10V,240mA 2.5V@250uA N Channel SOT-23 MOSFETs ROHS
N CHANNEL MOSFET, 60V, 310mA SOT-23, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:420mW RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 310mA SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:310mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V RoHS Compliant: Yes
MOSFET N-CH 60V 260MA SOT23-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002ET1GOSTR-ND | 278-2N7002ET1G | 2N7002ET1G | 005720-2N7002ET1G | 2N7002ET1G | 2N7002ET1G | 50M2216 | 09R9861 | 90W9723 | 2N7002ET1G |
| Product Name | Single FETs, MOSFETs | 60V 260mA SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002ET1G | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | N Channel Mosfet, 60V, 310Ma Sot-23, Full Reel; Channel Type Onsemi | N Channel Mosfet, 60V, 310Ma Sot-23; Channel Type Onsemi | Mosfet Transistor, N Channel, 310 Ma, 60 V, 0.86 Ohm, 10 V, 1 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23 | TO-3; SOT23 | TO-3; SOT23 | TO-3 | 0.81 nC @ 5 V | ||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts | 300 milliwatts | 420 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
