onsemi 2N7002EHT1G

Small signal MOSFET, 60 V, 310 mA, single N-channel, in SOT-23 package, with trench technology and Pb-free, RoHS-compliant construction. Maximum thermal resistance junction-to-ambient is 417 ℃/W under steady-state conditions on a 1 in² FR4 board. Operating junction and storage temperature range is -55℃ to +150℃. Drain-source on-resistance is 3.0 Ω maximum at 4.5 V gate drive and 50 mA drain current. Package dimensions conform to SOT-23 (TO-236) with a body length of 2.90 mm max, width of 1.30 mm max, and height of 1.00 mm max. Applications include low-side load switching, level shift circuits, and portable electronics.