N-Channel enhancement mode field effect transistor for low voltage, low current switching applications, packaged in TO-236AB (SOT-23) with a drain-source voltage rating of 60 V, continuous drain current of 115 mA, and power dissipation of 200 mW. It has a typical on-state resistance of 2 Ω at 10 V gate-source voltage and 500 mA drain current, and a gate threshold voltage range of 1 to 2.5 V. The device has a thermal resistance of 625 °C/W, operates from -65 to 150 °C, and supports pulsed drain currents up to 800 mA.
Small Signal Field-Effect Transistor, 0.115A, 60V, N-Channel MOSFET, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 2N7002D87Z |
| Polarity | N-Channel |
