onsemi Single FETs, MOSFETs 2N7000RLRA

N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole TO-92 (TO-226)

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: 2N7000RLRA from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 200mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7000RLRA can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 108699-2N7000RLRA
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance