onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000RLRA 2N7000RLRA

Description
Manufacturer: ON Semiconductor Win Source Part Number: 108699-2N7000RLRA Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 108699-2N7000RLRA Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000RLRA - 108699-2N7000RLRA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000RLRA
108699-2N7000RLRA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000RLRA 108699-2N7000RLRA
Manufacturer: ON Semiconductor Win Source Part Number: 108699-2N7000RLRA Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 108699-2N7000RLRA
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 2N7000RLRAOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7000RLRAOSTR-ND
Single FETs, MOSFETs 2N7000RLRAOSTR-ND
N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole TO-92 (TO-226)

N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7000RLRA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7000RLRA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7000RLRA
MOSFET N-CH 60V 200MA TO92-3

MOSFET N-CH 60V 200MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 108699-2N7000RLRA 2N7000RLRAOSTR-ND 2N7000RLRA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000RLRA Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 350 milliwatts
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