onsemi Single FETs, MOSFETs 2N7000BU

Description
MOSFET N-CH 60V 200MA TO92-3
  • Single FETs, MOSFETs - 2N7000BU - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000BU - 1004050-2N7000BU - Win Source Electronics
    Win Source Electronics
  • 2N7000BU - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - 2N7000BU-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3; Channel Type Onsemi - 31Y5850 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET 60V N-Channel Sm Sig - 598-2N7000BU - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7000BU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 60V 200MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2N7000BU - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7000BU
Single FETs, MOSFETs 2N7000BU
MOSFET N-CH 60V 200MA TO92-3

MOSFET N-CH 60V 200MA TO92-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000BU - 1004050-2N7000BU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000BU
1004050-2N7000BU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000BU 1004050-2N7000BU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1004050-2N7000BU Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200mA (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 10k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1004050-2N7000BU
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Quantity per package: 10k pcs

Buy Now Datasheet
- 2N7000BU - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2N7000BU
2N7000BU
Small Signal Field-Effect Transistor, 0.2A, 60V, N-Channel, MOSFET, TO-92

Small Signal Field-Effect Transistor, 0.2A, 60V, N-Channel, MOSFET, TO-92

Supplier's Site Datasheet
Single FETs, MOSFETs - 2N7000BU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7000BU-ND
Single FETs, MOSFETs 2N7000BU-ND
N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 60V MOSFET Transistor
2088-2N7000BU
N-Channel 60V MOSFET Transistor 2088-2N7000BU
MOSFETs 60V N-Channel Sm Sig Product overview: 2N7000BU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-2N7000BU can be used for catalog matching and distributor lookup.

MOSFETs 60V N-Channel Sm Sig Product overview: 2N7000BU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-2N7000BU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3; Channel Type Onsemi - 31Y5850 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3; Channel Type Onsemi
31Y5850
Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3; Channel Type Onsemi 31Y5850
MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.9V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.9V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET 60V N-Channel Sm Sig - 598-2N7000BU - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 60V N-Channel Sm Sig
598-2N7000BU
MOSFET 60V N-Channel Sm Sig 598-2N7000BU
MOSFET 60V N-Channel Sm Sig

MOSFET 60V N-Channel Sm Sig

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7000BU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7000BU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7000BU
MOSFET N-CH 60V 200MA TO92-3

MOSFET N-CH 60V 200MA TO92-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2N7000BU 1004050-2N7000BU 2N7000BU 2N7000BU-ND 2088-2N7000BU 31Y5850 598-2N7000BU 2N7000BU
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000BU Single FETs, MOSFETs N-Channel 60V MOSFET Transistor Mosfet, N-Ch, 60V, 0.2A, To-226Aa-3; Channel Type Onsemi MOSFET 60V N-Channel Sm Sig Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 200 milliamps 200 milliamps
PD 400 milliwatts 400 milliwatts 400 milliwatts 400 milliwatts
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