onsemi Single Bipolar Transistors 2N6668G

The 2N6668G is a PNP Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. It is packaged in a TO-220AB case, with a maximum collector-emitter voltage of 80 Vdc, a continuous collector current of 10 Adc, and a peak collector current of 15 Adc. The device has a maximum collector-emitter saturation voltage of 3.0 Vdc at 10 Adc collector current and 0.1 Adc base current, and a minimum DC current gain of 1000 at 10 Adc collector current. Total device dissipation is 65 W at a case temperature of 25°C, with a junction-to-case thermal resistance of 1.92 °C/W. The transistor is RoHS compliant and features monolithic construction with built-in base-emitter shunt resistors.