onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6667 2N6667

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124179-2N6667 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Family Part Number: 2N6667 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V Maximum Power: 2W
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124179-2N6667 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Family Part Number: 2N6667 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V Maximum Power: 2W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6667 - 1124179-2N6667 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6667
1124179-2N6667
TRANSISTORS - Transistors (BJT) - Single - 2N6667 1124179-2N6667
Manufacturer: ON Semiconductor Win Source Part Number: 1124179-2N6667 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Family Part Number: 2N6667 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V Maximum Power: 2W

Manufacturer: ON Semiconductor
Win Source Part Number: 1124179-2N6667
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: PNP - Darlington
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 1mA
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Family Part Number: 2N6667
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V
Maximum Power: 2W

Buy Now
Single Bipolar Transistors - 2N6667OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6667OS-ND
Single Bipolar Transistors 2N6667OS-ND
Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220

Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6667 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6667
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6667
TRANS PNP DARL 60V 10A TO220

TRANS PNP DARL 60V 10A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1124179-2N6667 2N6667OS-ND 2N6667
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6667 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-220; SOT3 TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
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