Bipolar Transistors - BJT NPN Si Transistor Epitaxial Product overview: 2N6517TA from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-2N6517TA can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1004032-2N6517TA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 1V @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 50mA, 10V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs
TRANS NPN 350V 0.5A TO92-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Small Signal Diode, NPN, 400 V, 200 MHz, 625 mW, 20 RoHS Compliant: Yes
TRANS, NPN, 400V, 150DEG C, 0.625W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; DC Collector Current:500mA; Power Dissipation Pd:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 2087-2N6517TA | 2N6517TATB-ND | 1004032-2N6517TA | 2N6517TA | 2N6517TA | 31Y5848 | 83C3460 |
| Product Name | Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - 2N6517TA | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Small Signal Diode, Npn, 400 V, 200 Mhz, 625 Mw, 20 Rohs Compliant Onsemi | Trans, Npn, 400V, 150Deg C, 0.625W; Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN; NPN | NPN | NPN | ||
| Package Type | Ammo Pack | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92; SOT3; TO-92-3 | TO-3 | TO-3 | ||
| Packing Method | Ammo Pack | Tape Reel; Cut Tape (CT),Tape & Box (TB) | |||||
| IC(max) | 500 milliamps | 500 milliamps |
