onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6517BU 2N6517BU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1004030-2N6517BU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 1V @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 20 @ 50mA, 10V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 10k pcs
  • TRANSISTORS - Transistors (BJT) - Single - 2N6517BU - 1004030-2N6517BU - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 2N6517BU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6517BU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • TRANS NPN 350V 0.5A TO-92 - 598-2N6517BU - Utmel Electronic Limited
    Utmel Electronic Limited
  • Bipolar Transistor, Npn, 350V To-92; Transistor Polarity Onsemi - 58K2826 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor, Npn, 350V, 0.5A, To-92-3; Transistor Polarity Onsemi - 46AC2104 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1004030-2N6517BU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 1V @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 20 @ 50mA, 10V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 10k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6517BU - 1004030-2N6517BU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6517BU
1004030-2N6517BU
TRANSISTORS - Transistors (BJT) - Single - 2N6517BU 1004030-2N6517BU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1004030-2N6517BU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 1V @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 20 @ 50mA, 10V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 10k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1004030-2N6517BU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 1V @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 50mA, 10V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 10k pcs

Buy Now Datasheet
Single Bipolar Transistors - 2N6517BU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6517BU-ND
Single Bipolar Transistors 2N6517BU-ND
Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6517BU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6517BU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6517BU
TRANS NPN 350V 0.5A TO92-3

TRANS NPN 350V 0.5A TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6517BU
Bipolar Transistors - BJT 2N6517BU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Buy Now Datasheet
TRANS NPN 350V 0.5A TO-92 - 598-2N6517BU - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS NPN 350V 0.5A TO-92
598-2N6517BU
TRANS NPN 350V 0.5A TO-92 598-2N6517BU
TRANS NPN 350V 0.5A TO-92

TRANS NPN 350V 0.5A TO-92

Supplier's Site
Bipolar Transistor, Npn, 350V To-92; Transistor Polarity Onsemi - 58K2826 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 350V To-92; Transistor Polarity Onsemi
58K2826
Bipolar Transistor, Npn, 350V To-92; Transistor Polarity Onsemi 58K2826
BIPOLAR TRANSISTOR, NPN, 350V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; DC Collector Current:500mA; Power Dissipation Pd:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 350V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; DC Collector Current:500mA; Power Dissipation Pd:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor, Npn, 350V, 0.5A, To-92-3; Transistor Polarity Onsemi - 46AC2104 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 350V, 0.5A, To-92-3; Transistor Polarity Onsemi
46AC2104
Transistor, Npn, 350V, 0.5A, To-92-3; Transistor Polarity Onsemi 46AC2104
TRANSISTOR, NPN, 350V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5W; DC Collector Current:500mA; DC Current Gain hFE:15hFE; Transistor CaseRoHS Compliant: Yes

TRANSISTOR, NPN, 350V, 0.5A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5W; DC Collector Current:500mA; DC Current Gain hFE:15hFE; Transistor CaseRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors
Product Number 1004030-2N6517BU 2N6517BU-ND 2N6517BU 2N6517BU 598-2N6517BU 58K2826 46AC2104
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6517BU Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT TRANS NPN 350V 0.5A TO-92 Bipolar Transistor, Npn, 350V To-92; Transistor Polarity Onsemi Transistor, Npn, 350V, 0.5A, To-92-3; Transistor Polarity Onsemi
Polarity NPN; NPN NPN NPN; NPN NPN NPN
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-3; TO-92
Packing Method Bulk; Bulk
IC(max) 500 milliamps 500 milliamps
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