The 2N6491G is a PNP silicon power transistor in a TO-220 package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 15 A, and a total power dissipation of 75 W at a case temperature of 25°C, derating at 0.6 W/°C above that point. The device has a thermal resistance of 1.67°C/W from junction to case and 70°C/W from junction to ambient. The current gain (hFE) ranges from 5 to 150 at collector currents of 15 A and 5 A respectively. It is RoHS compliant and features a Pb-free package. The TO-220 case measures up to 15.75 mm in body length and 10.53 mm in width.
BIPOLAR TRANSISTOR, PNP -80V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:15A; Power Dissipation:1.8W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:5MHzRoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 28AC7858 |
| Product Name | Bipolar Transistor, Pnp -80V To-220; Transistor Polarity Onsemi |
| Polarity | PNP |
| Package Type | TO-3; TO-220 |
| IC(max) | 15000 milliamps |
