onsemi Single Bipolar Transistors 2N6387

Description
Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - 2N6387-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6387-ND
Single Bipolar Transistors 2N6387-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N6387 - 1124124-2N6387 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6387
1124124-2N6387
TRANSISTORS - Transistors (BJT) - Single - 2N6387 1124124-2N6387
Manufacturer: ON Semiconductor Win Source Part Number: 1124124-2N6387 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Family Part Number: 2N6387 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V Maximum Power: 2W

Manufacturer: ON Semiconductor
Win Source Part Number: 1124124-2N6387
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN - Darlington
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 1mA
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Family Part Number: 2N6387
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 100mA, 10A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 5A, 3V
Maximum Power: 2W

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6387 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6387
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6387
TRANS NPN DARL 60V 10A TO220

TRANS NPN DARL 60V 10A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number 2N6387-ND 1124124-2N6387 2N6387
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N6387 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
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