onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6341 2N6341

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124108-2N6341 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 40MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-204 (TO-3) Status: Obsolete Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 25A Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50μA Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Defence, Military & Aerospace Family Part Number: 2N6341 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.8V at 2.5A, 25A DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 10A, 2V Maximum Power: 200W
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124108-2N6341 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 40MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-204 (TO-3) Status: Obsolete Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 25A Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50μA Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Defence, Military & Aerospace Family Part Number: 2N6341 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.8V at 2.5A, 25A DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 10A, 2V Maximum Power: 200W
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6341 - 1124108-2N6341 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6341
1124108-2N6341
TRANSISTORS - Transistors (BJT) - Single - 2N6341 1124108-2N6341
Manufacturer: ON Semiconductor Win Source Part Number: 1124108-2N6341 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 40MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-204 (TO-3) Status: Obsolete Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 25A Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50μA Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Defence, Military & Aerospace Family Part Number: 2N6341 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.8V at 2.5A, 25A DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 10A, 2V Maximum Power: 200W

Manufacturer: ON Semiconductor
Win Source Part Number: 1124108-2N6341
Packaging: Tray
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 40MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-204 (TO-3)
Status: Obsolete
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-204AA, TO-3
Current - Collector (Ic) (Maximum): 25A
Voltage - Collector Emitter Breakdown (Maximum): 150V
Current - Collector Cutoff (Maximum): 50μA
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Defence, Military & Aerospace
Family Part Number: 2N6341
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.8V at 2.5A, 25A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 10A, 2V
Maximum Power: 200W

Buy Now
Single Bipolar Transistors - 2N6341-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6341-ND
Single Bipolar Transistors 2N6341-ND
Bipolar (BJT) Transistor NPN 150V 25A 40MHz 200W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN 150V 25A 40MHz 200W Through Hole TO-204 (TO-3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6341 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6341
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6341
TRANS NPN 150V 25A TO204

TRANS NPN 150V 25A TO204

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1124108-2N6341 2N6341-ND 2N6341
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6341 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-3; SOT3 TO-3; TO-204AA, TO-3
Packing Method Tray; Tray Tray
TJ -65 to 200 C (-85 to 392 F)
Power Gain 30 dB
Unlock Full Specs
to access all available technical data