onsemi Single Bipolar Transistors 2N6338G

Description
Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-204 (TO-3)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-204 (TO-3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N6338G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6338G-ND
Single Bipolar Transistors 2N6338G-ND
Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-204 (TO-3)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N6338G - 762288-2N6338G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6338G
762288-2N6338G
TRANSISTORS - Transistors (BJT) - Single - 2N6338G 762288-2N6338G
Manufacturer: ON Semiconductor Win Source Part Number: 762288-2N6338G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 200W Transistor Type: NPN Frequency - Transition: 40MHz Family Name: 2N6338 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 25A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 1.8V @ 2.5A, 25A Current - Collector Cutoff (Maximum): 50μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 10A, 2V Alternative Parts (Cross-Reference): 2N6338; ; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762288-2N6338G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AA, TO-3
Power - Max: 200W
Transistor Type: NPN
Frequency - Transition: 40MHz
Family Name: 2N6338
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 25A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Maximum): 50μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 10A, 2V
Alternative Parts (Cross-Reference): 2N6338; ;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
25A 100V Bipolar Transistor
276-2N6338G
25A 100V Bipolar Transistor 276-2N6338G
25A 100V NPN BJT Power Transistor TO-204 Product overview: 2N6338G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25A, 100V. Search-friendly keywords include transistor, BJT, switching, amplification, 25A, 100V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6338G can be used for catalog matching and distributor lookup.

25A 100V NPN BJT Power Transistor TO-204 Product overview: 2N6338G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25A, 100V. Search-friendly keywords include transistor, BJT, switching, amplification, 25A, 100V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6338G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor, Npn, 100V, To-3; Transistor Polarity Onsemi - 26K5319 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 100V, To-3; Transistor Polarity Onsemi
26K5319
Bipolar Transistor, Npn, 100V, To-3; Transistor Polarity Onsemi 26K5319
BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Qualification:-; MSL:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Qualification:-; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6338G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6338G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6338G
TRANS NPN 100V 25A TO204

TRANS NPN 100V 25A TO204

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6338G
Bipolar Transistors - BJT 2N6338G
Bipolar Transistors - BJT 25A 100V 200W NPN

Bipolar Transistors - BJT 25A 100V 200W NPN

Buy Now Datasheet
ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE - 598-2N6338G - Utmel Electronic Limited
Hong Kong, China
ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE
598-2N6338G
ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE 598-2N6338G
ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE

ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N6338G-ND 762288-2N6338G 276-2N6338G 26K5319 2N6338G 2N6338G 598-2N6338G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N6338G 25A 100V Bipolar Transistor Bipolar Transistor, Npn, 100V, To-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE
Polarity NPN NPN NPN NPN NPN; NPN
Package Type TO-3; TO-204AA, TO-3 TO-3; SOT3 TO-3
IC(max) 25000 milliamps 25000 milliamps 25000 milliamps 25000 milliamps
VCEO 100 volts 100 volts 100 volts 100 volts
VCBO 120 volts
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