onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6109 2N6109

Description
Manufacturer: ON Semiconductor Win Source Part Number: 038881-2N6109 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 2.5A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 038881-2N6109 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 2.5A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6109 - 038881-2N6109 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6109
038881-2N6109
TRANSISTORS - Transistors (BJT) - Single - 2N6109 038881-2N6109
Manufacturer: ON Semiconductor Win Source Part Number: 038881-2N6109 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 2.5A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 038881-2N6109
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 10MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 3.5V @ 3A, 7A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 30 @ 2.5A, 4V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - 2N6109OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6109OS-ND
Single Bipolar Transistors 2N6109OS-ND
Bipolar (BJT) Transistor PNP 50V 7A 10MHz 40W Through Hole TO-220

Bipolar (BJT) Transistor PNP 50V 7A 10MHz 40W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6109 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6109
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6109
TRANS PNP 50V 7A TO220

TRANS PNP 50V 7A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 038881-2N6109 2N6109OS-ND 2N6109
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6109 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP
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