onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6036G 2N6036G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 075343-2N6036G Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 075343-2N6036G Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6036G - 075343-2N6036G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6036G
075343-2N6036G
TRANSISTORS - Transistors (BJT) - Single - 2N6036G 075343-2N6036G
Manufacturer: ON Semiconductor Win Source Part Number: 075343-2N6036G Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 750 @ 2A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 075343-2N6036G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
80V 4A Bipolar Transistor
276-2N6036G
80V 4A Bipolar Transistor 276-2N6036G
PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: 2N6036G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6036G can be used for catalog matching and distributor lookup.

PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: 2N6036G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6036G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2N6036GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6036GOS-ND
Single Bipolar Transistors 2N6036GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126

Buy Now Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
2N6036G
Darlington Transistors 2N6036G
Darlington Transistors 4A 80V Bipolar Power PNP

Darlington Transistors 4A 80V Bipolar Power PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6036G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6036G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6036G
TRANS PNP DARL 80V 4A TO126

TRANS PNP DARL 80V 4A TO126

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number 075343-2N6036G 276-2N6036G 2N6036GOS-ND 2N6036G 2N6036G
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6036G 80V 4A Bipolar Transistor Single Bipolar Transistors Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Darlington PNP PNP
Package Type SOT3; TO-225AA TO-225AA, TO-126-3
IC(max) 4000 milliamps 4000 milliamps
VCEO 80 volts 80 volts
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