onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6036G 2N6036G

Manufacturer: ON Semiconductor
Win Source Part Number: 075343-2N6036G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 750 @ 2A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

PNP Darlington Power Transistor, 80V, 4A, TO-225 Product overview: 2N6036G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6036G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-126