onsemi Single Bipolar Transistors 2N6036

The 2N6036G is a PNP silicon Darlington power transistor designed for general purpose amplifier and low-speed switching applications. It is packaged in a TO-225 case with a thermal resistance from junction to case of 3.12 °C/W and dissipates up to 40 W at 25 °C case temperature, derating at 320 mW/°C above 25 °C. The device has a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a peak collector current of 8.0 A. The base-emitter saturation voltage is up to 4.0 V at 4.0 A collector current and 40 mA base current. The epoxy meets UL 94 V-0 and the package is Pb-free and RoHS compliant. Operating and storage junction temperature ranges from -65 °C to +150 °C.