onsemi TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6027RLRA 2N6027RLRA

Description
Manufacturer: ON Semiconductor Win Source Part Number: 144111-2N6027RLRA Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50μA Current - Peak: 2μA Output Voltage: 11V Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 144111-2N6027RLRA Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50μA Current - Peak: 2μA Output Voltage: 11V Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6027RLRA - 144111-2N6027RLRA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6027RLRA
144111-2N6027RLRA
TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6027RLRA 144111-2N6027RLRA
Manufacturer: ON Semiconductor Win Source Part Number: 144111-2N6027RLRA Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50μA Current - Peak: 2μA Output Voltage: 11V Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 144111-2N6027RLRA
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50μA
Current - Peak: 2μA
Output Voltage: 11V
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Programmable Unijunction - 2N6027RLRA - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Programmable Unijunction
2N6027RLRA
Discrete Semiconductor Products - Transistors - Programmable Unijunction 2N6027RLRA
PROGRAMMABLE UJT 40V TO92

PROGRAMMABLE UJT 40V TO92

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors RF Transistors
Product Number 144111-2N6027RLRA 2N6027RLRA
Product Name TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6027RLRA Discrete Semiconductor Products - Transistors - Programmable Unijunction
Package Type TO-92; SOT3
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB1134S - 906320-2SB1134S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor - QPD1028 - Qorvo
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
Transistor Grade / Operating Range Military
Package Type NI-780
View Details
2 suppliers
Single FETs, MOSFETs - 64-4092PBF-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA
View Details
2 suppliers