onsemi Single Bipolar Transistors 2N5657G

Description
TRANS NPN 350V 0.5A TO126
Request a Quote Datasheet
Description
TRANS NPN 350V 0.5A TO126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N5657G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N5657G
Single Bipolar Transistors 2N5657G
TRANS NPN 350V 0.5A TO126

TRANS NPN 350V 0.5A TO126

Supplier's Site Datasheet
Single Bipolar Transistors - 2N5657GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5657GOS-ND
Single Bipolar Transistors 2N5657GOS-ND
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-126

Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-126

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N5657G - 762260-2N5657G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5657G
762260-2N5657G
TRANSISTORS - Transistors (BJT) - Single - 2N5657G 762260-2N5657G
Manufacturer: ON Semiconductor Win Source Part Number: 762260-2N5657G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 20W Transistor Type: NPN Frequency - Transition: 10MHz Family Name: 2N5657 Categories: Discrete Semiconductor Products Manufacturer Package: TO-225AA Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 350V Vce Saturation (Maximum) @ Ib, Ic: 10V @ 100mA, 500mA Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 100mA, 10V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762260-2N5657G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 20W
Transistor Type: NPN
Frequency - Transition: 10MHz
Family Name: 2N5657
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 350V
Vce Saturation (Maximum) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 100mA, 10V
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5657G
Bipolar Transistors - BJT 2N5657G
Bipolar Transistors - BJT 1A 250V 20W NPN

Bipolar Transistors - BJT 1A 250V 20W NPN

Buy Now Datasheet
Transistor - 18726362 - Radwell International
Willingboro, NJ, United States
Transistor
18726362
Transistor 18726362
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 350V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 350V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Bipolar Transistor, Npn, 350V, To-225; Transistor Polarity Onsemi - 26K5297 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 350V, To-225; Transistor Polarity Onsemi
26K5297
Bipolar Transistor, Npn, 350V, To-225; Transistor Polarity Onsemi 26K5297
BIPOLAR TRANSISTOR, NPN, 350V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 350V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:350V; Continuous Collector Current:500mA; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5657G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5657G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5657G
TRANS NPN 350V 0.5A TO126

TRANS NPN 350V 0.5A TO126

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5657G 2N5657GOS-ND 762260-2N5657G 2N5657G 18726362 26K5297 2N5657G
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N5657G Bipolar Transistors - BJT Transistor Bipolar Transistor, Npn, 350V, To-225; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN NPN
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3 TO-3
IC(max) 500 milliamps 500 milliamps 500 milliamps
VCEO 350 volts 350 volts 350 volts
Operating Frequency 10 MHz
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