onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5655 2N5655

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1123989-2N5655 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-225AA Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Family Part Number: 2N5655 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10mV Maximum Power: 20W
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1123989-2N5655 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-225AA Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Family Part Number: 2N5655 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10mV Maximum Power: 20W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5655 - 1123989-2N5655 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5655
1123989-2N5655
TRANSISTORS - Transistors (BJT) - Single - 2N5655 1123989-2N5655
Manufacturer: ON Semiconductor Win Source Part Number: 1123989-2N5655 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-225AA Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Family Part Number: 2N5655 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10mV Maximum Power: 20W

Manufacturer: ON Semiconductor
Win Source Part Number: 1123989-2N5655
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 10MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-225AA
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 250V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Family Part Number: 2N5655
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10mV
Maximum Power: 20W

Buy Now
Single Bipolar Transistors - 2N5655OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5655OS-ND
Single Bipolar Transistors 2N5655OS-ND
Bipolar (BJT) Transistor NPN 250V 500mA 10MHz 20W Through Hole TO-126

Bipolar (BJT) Transistor NPN 250V 500mA 10MHz 20W Through Hole TO-126

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5655 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5655
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5655
TRANS NPN 250V 0.5A TO126

TRANS NPN 250V 0.5A TO126

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1123989-2N5655 2N5655OS-ND 2N5655
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5655 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 TO-225AA, TO-126-3
Packing Method Bulk; Bulk Bulk; Bulk
TJ -65 to 150 C (-85 to 302 F)
Power Gain 30 dB
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