onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5551TF 2N5551TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003954-2N5551TF Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003954-2N5551TF Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5551TF - 1003954-2N5551TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5551TF
1003954-2N5551TF
TRANSISTORS - Transistors (BJT) - Single - 2N5551TF 1003954-2N5551TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003954-2N5551TF Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003954-2N5551TF
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs

Buy Now Datasheet
Single Bipolar Transistors - 2N5551TF - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N5551TF
Single Bipolar Transistors 2N5551TF
2N5551 - SMALL SIGNAL BIPOLAR TR

2N5551 - SMALL SIGNAL BIPOLAR TR

Supplier's Site Datasheet
Single Bipolar Transistors - 2N5551TFCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5551TFCT-ND
Single Bipolar Transistors 2N5551TFCT-ND
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Single Bipolar Transistors - 2N5551TFTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5551TFTR-ND
Single Bipolar Transistors 2N5551TFTR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
 - 2N5551TF - Rochester Electronics
Newburyport, MA, United States
2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92

2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92

Supplier's Site Datasheet
Bipolar Transistors - 8051113 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
8051113
Bipolar Transistors 8051113
Transistor, Fairchild, 2N5551TF

Transistor, Fairchild, 2N5551TF

Supplier's Site
Bipolar Transistors - 1663209 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1663209
Bipolar Transistors 1663209
Transistor, Fairchild, 2N5551TF

Transistor, Fairchild, 2N5551TF

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5551TF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5551TF
TRANS NPN 160V 0.6A TO92-3

TRANS NPN 160V 0.6A TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Rochester Electronics RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1003954-2N5551TF 2N5551TF 2N5551TFCT-ND 2N5551TF 8051113 2N5551TF
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5551TF Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN NPN NPN
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; TO-92 TO-92; To-92
IC(max) 600 milliamps 600 milliamps
VCEO 160 volts 160 volts
Operating Frequency 100 MHz
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