onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5551TA 2N5551TA

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 101678-2N5551TA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Family Name: 2N5551
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Alternative Parts (Cross-Reference): 2N5551; 2N5551RL1G; 2N5551ZL1G; 2N5551_D27Z;
Introduction Date: July 06, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

Bipolar Transistors - BJT NPN Transistor General Purpose Product overview: 2N5551TA from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-2N5551TA can be used for catalog matching and distributor lookup.

Transistor, Fairchild, 2N5551TA