onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2N5551RLRMG

Win Source Part Number: 962468-2N5551RLRMG
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Box (TB)
Standard Package: 2,000
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Base Product Number: 2N5551
Product Status: Obsolete

600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226AA, 3 PIN Product overview: 2N5551RLRMG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600mA, 160V. Search-friendly keywords include transistor, BJT, switching, amplification, 600mA, 160V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5551RLRMG can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)