onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG 2N5551RLRAG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 118857-2N5551RLRAG Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
  • TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG - 118857-2N5551RLRAG - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 2N5551RLRAGOSTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551RLRAG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 118857-2N5551RLRAG Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG - 118857-2N5551RLRAG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG
118857-2N5551RLRAG
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG 118857-2N5551RLRAG
Manufacturer: ON Semiconductor Win Source Part Number: 118857-2N5551RLRAG Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 118857-2N5551RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Single Bipolar Transistors - 2N5551RLRAGOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5551RLRAGOSTR-ND
Single Bipolar Transistors 2N5551RLRAGOSTR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551RLRAG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5551RLRAG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5551RLRAG
TRANS NPN 160V 0.6A TO92

TRANS NPN 160V 0.6A TO92

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 118857-2N5551RLRAG 2N5551RLRAGOSTR-ND 2N5551RLRAG
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
Unlock Full Specs
to access all available technical data