onsemi Single Bipolar Transistors 2N5551RLRAG

Description
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
  • Single Bipolar Transistors - 2N5551RLRAGOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG - 118857-2N5551RLRAG - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551RLRAG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N5551RLRAGOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5551RLRAGOSTR-ND
Single Bipolar Transistors 2N5551RLRAGOSTR-ND
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG - 118857-2N5551RLRAG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG
118857-2N5551RLRAG
TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG 118857-2N5551RLRAG
Manufacturer: ON Semiconductor Win Source Part Number: 118857-2N5551RLRAG Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 118857-2N5551RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
160V 600mA 300MHz Bipolar Transistor
276-2N5551RLRAG
160V 600mA 300MHz Bipolar Transistor 276-2N5551RLRAG
NPN BJT Transistor, 160V, 600mA, 300MHz, TO-92 Product overview: 2N5551RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 600mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 600mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5551RLRAG can be used for catalog matching and distributor lookup.

NPN BJT Transistor, 160V, 600mA, 300MHz, TO-92 Product overview: 2N5551RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 600mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 600mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5551RLRAG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551RLRAG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5551RLRAG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5551RLRAG
TRANS NPN 160V 0.6A TO92

TRANS NPN 160V 0.6A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5551RLRAGOSTR-ND 118857-2N5551RLRAG 276-2N5551RLRAG 2N5551RLRAG
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N5551RLRAG 160V 600mA 300MHz Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3
IC(max) 600 milliamps 600 milliamps
VCEO 160 volts 160 volts
VCBO 180 volts
Unlock Full Specs
to access all available technical data