Transistor, Fairchild, 2N5551BU
Transistor, Fairchild, 2N5551BU
Transistor, Fairchild, 2N5551BU
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003950-2N5551BU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Quantity per package: 10k pcs
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
Bipolar Transistors - BJT NPN Transistor General Purpose Product overview: 2N5551BU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-2N5551BU can be used for catalog matching and distributor lookup.
TRANS NPN 160V 0.6A TO92-3
TRANS, NPN, 160V, 0.6A, 150DEG C, 0.625W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; DC Collector Current:600mA; Power Dissipation Pd:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
2N5551 - SMALL SIGNAL BIPOLAR TR
Bipolar Transistors - BJT NPN Transistor General Purpose
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 8051100 | 8051100P | 1003950-2N5551BU | 2N5551BU-ND | 2087-2N5551BU | 2N5551BU | 46AC2103 | 2N5551BU | 2N5551BU |
| Product Name | Bipolar Transistors | Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - 2N5551BU | Single Bipolar Transistors | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Npn, 160V, 0.6A, 150Deg C, 0.625W; Transistor Polarity Onsemi | Single Bipolar Transistors | Bipolar Transistors - BJT |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | NPN; NPN | |||
| Package Type | TO-92; To-92 | TO-92; TO-92 | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | Bulk | TO-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | ||
| Number of units in IC | 1 | ||||||||
| Packing Method | Bulk | Bulk; Bulk | |||||||
| IC(max) | 600 milliamps | 600 milliamps | 600 milliamps |
