Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003949-2N5550TAR
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 250mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3
TRANS NPN 140V 0.6A TO92-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial Product overview: 2N5550TAR from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-2N5550TAR can be used for catalog matching and distributor lookup.
TRANS NPN 140V 0.6A TO92-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1003949-2N5550TAR | 2N5550TARTB-ND | 2N5550TAR | 2087-2N5550TAR | 2N5550TAR | 2N5550TAR |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | NPN; NPN | NPN | NPN; NPN | NPN | ||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Ammo Pack | ||
| IC(max) | 600 milliamps | 600 milliamps | 600 milliamps | |||
| VCEO | 140 volts | 140 volts | ||||
| Operating Frequency | 300 MHz |
