onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR 2N5550TAR

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003949-2N5550TAR Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 250mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 60 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003949-2N5550TAR Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 250mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 60 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR - 1003949-2N5550TAR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR
1003949-2N5550TAR
TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR 1003949-2N5550TAR
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003949-2N5550TAR Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 250mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 60 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003949-2N5550TAR
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 250mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs

Buy Now Datasheet
Single Bipolar Transistors - 2N5550TAR - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N5550TAR
Single Bipolar Transistors 2N5550TAR
TRANS NPN 140V 0.6A TO92-3

TRANS NPN 140V 0.6A TO92-3

Supplier's Site Datasheet
Single Bipolar Transistors - 2N5550TARTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5550TARTB-ND
Single Bipolar Transistors 2N5550TARTB-ND
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Single Bipolar Transistors - 2N5550TARCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5550TARCT-ND
Single Bipolar Transistors 2N5550TARCT-ND
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5550TAR
Bipolar Transistors - BJT 2N5550TAR
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5550TAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5550TAR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5550TAR
TRANS NPN 140V 0.6A TO92-3

TRANS NPN 140V 0.6A TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1003949-2N5550TAR 2N5550TAR 2N5550TARTB-ND 2N5550TAR 2N5550TAR
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5550TAR Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads
IC(max) 600 milliamps 600 milliamps
VCEO 140 volts 140 volts
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