onsemi Single Bipolar Transistors 2N5550

Description
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N5550OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5550OS-ND
Single Bipolar Transistors 2N5550OS-ND
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N5550 - 1123976-2N5550 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5550
1123976-2N5550
TRANSISTORS - Transistors (BJT) - Single - 2N5550 1123976-2N5550
Manufacturer: ON Semiconductor Win Source Part Number: 1123976-2N5550 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 300MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 140V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Family Part Number: 2N5550 Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 5mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 60 at 10mA, 5V Maximum Power: 625mW

Manufacturer: ON Semiconductor
Win Source Part Number: 1123976-2N5550
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 300MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Maximum): 600mA
Voltage - Collector Emitter Breakdown (Maximum): 140V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Family Part Number: 2N5550
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 5mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 60 at 10mA, 5V
Maximum Power: 625mW

Buy Now
Singapore
Bipolar Transistor
276-2N5550
Bipolar Transistor 276-2N5550
Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: 2N5550 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5550 can be used for catalog matching and distributor lookup.

Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: 2N5550 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5550 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5550 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5550
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5550
TRANS NPN 140V 0.6A TO92

TRANS NPN 140V 0.6A TO92

Supplier's Site
Single Bipolar Transistors - 2N5550 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N5550
Single Bipolar Transistors 2N5550
TRANS NPN 140V 0.6A TO92

TRANS NPN 140V 0.6A TO92

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5550OS-ND 1123976-2N5550 276-2N5550 2N5550 2N5550
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N5550 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors
Polarity NPN NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3 TO-92; TO-226-3, TO-92-3 Long Body
Packing Method Bulk; Bulk Bulk; Bulk
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Power Gain 60 dB
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