onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5401BU 2N5401BU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 197468-2N5401BU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 400MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 150V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor PNP 150V 600mA 400MHz 625mW Through Hole TO-92-3

PNP BJT Transistor 150V 600mA TO-92 Through Hole Product overview: 2N5401BU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 150V, 600mA. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 150V, 600mA, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5401BU can be used for catalog matching and distributor lookup.