onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5307 2N5307

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003939-2N5307 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.4V @ 200μA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 2000 @ 2mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003939-2N5307 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.4V @ 200μA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 2000 @ 2mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5307 - 1003939-2N5307 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5307
1003939-2N5307
TRANSISTORS - Transistors (BJT) - Single - 2N5307 1003939-2N5307
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003939-2N5307 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1.4V @ 200μA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 2000 @ 2mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003939-2N5307
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.4V @ 200μA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 2mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
40V 1.2A Bipolar Transistor
276-2N5307
40V 1.2A Bipolar Transistor 276-2N5307
TRANS NPN DARL 40V 1.2A TO-92 Product overview: 2N5307 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 1.2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5307 can be used for catalog matching and distributor lookup.

TRANS NPN DARL 40V 1.2A TO-92 Product overview: 2N5307 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 1.2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5307 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2N5307-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5307-ND
Single Bipolar Transistors 2N5307-ND
Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5307 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5307
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5307
TRANS NPN DARL 40V 1.2A TO92-3

TRANS NPN DARL 40V 1.2A TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1003939-2N5307 276-2N5307 2N5307-ND 2N5307
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5307 40V 1.2A Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Darlington NPN NPN
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
IC(max) 1200 milliamps 1200 milliamps
VCEO 40 volts 40 volts
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