onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2N5302G

Description
Win Source Part Number: 1036405-2N5302G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tray Standard Package: 100 Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3) Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): MJ11012G; MJ802G; MJ8022N5302G.; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: ONSONS2N5302G,2N5302 GOS,2156-2N5302G Base Product Number: 2N5302 Product Status: Obsolete
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Description
Win Source Part Number: 1036405-2N5302G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tray Standard Package: 100 Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3) Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): MJ11012G; MJ802G; MJ8022N5302G.; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: ONSONS2N5302G,2N5302 GOS,2156-2N5302G Base Product Number: 2N5302 Product Status: Obsolete
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1036405-2N5302G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1036405-2N5302G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1036405-2N5302G
Win Source Part Number: 1036405-2N5302G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tray Standard Package: 100 Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3) Temperature Range - Operating: -65°C ~ 200°C (TJ) Alternative Parts (Cross-Reference): MJ11012G; MJ802G; MJ8022N5302G.; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: ONSONS2N5302G,2N5302 GOS,2156-2N5302G Base Product Number: 2N5302 Product Status: Obsolete

Win Source Part Number: 1036405-2N5302G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tray
Standard Package: 100
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
Temperature Range - Operating: -65°C ~ 200°C (TJ)
Alternative Parts (Cross-Reference): MJ11012G; MJ802G; MJ8022N5302G.;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: ONSONS2N5302G,2N5302GOS,2156-2N5302G
Base Product Number: 2N5302
Product Status: Obsolete

Buy Now Datasheet
Single Bipolar Transistors - 2N5302GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5302GOS-ND
Single Bipolar Transistors 2N5302GOS-ND
Bipolar (BJT) Transistor NPN 60V 30A 2MHz 200W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN 60V 30A 2MHz 200W Through Hole TO-204 (TO-3)

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5302G
Bipolar Transistors - BJT 2N5302G
Bipolar Transistors - BJT 30A 60V 200W NPN

Bipolar Transistors - BJT 30A 60V 200W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5302G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5302G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5302G
TRANS NPN 60V 30A TO204

TRANS NPN 60V 30A TO204

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1036405-2N5302G 2N5302GOS-ND 2N5302G 2N5302G
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-3; SOT3 TO-3; TO-204AA, TO-3
IC(max) 30000 milliamps 30000 milliamps
Power Gain 15 dB
Operating Frequency 2 MHz
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