onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2N5210BU

Manufacturer: onsemi
Win Source Part Number: 1325653-2N5210BU
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Bulk
Standard Package: 10,000
Mounting: Through Hole
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-226-3, TO-92-3 (TO-226AA)
ECCN: EAR99
Fake Threat In the Open Market: 72
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: S0024M,2N5210-NDR,2N5210
Base Product Number: 2N5210
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3

NPN BJT Transistor, 50V, 100mA, 30MHz, TO-92, Through Hole Product overview: 2N5210BU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 100mA, 30MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 100mA, 30MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5210BU can be used for catalog matching and distributor lookup.