onsemi Single Bipolar Transistors 2N5210BU

Description
Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N5210-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5210-ND
Single Bipolar Transistors 2N5210-ND
Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325653-2N5210BU - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325653-2N5210BU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325653-2N5210BU
Manufacturer: onsemi Win Source Part Number: 1325653-2N5210BU Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Bulk Standard Package: 10,000 Mounting: Through Hole Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 Fake Threat In the Open Market: 72 REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Other Part Number: S0024M,2N5210-NDR,2N 5210 Base Product Number: 2N5210 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: onsemi
Win Source Part Number: 1325653-2N5210BU
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Bulk
Standard Package: 10,000
Mounting: Through Hole
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-226-3, TO-92-3 (TO-226AA)
ECCN: EAR99
Fake Threat In the Open Market: 72
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: S0024M,2N5210-NDR,2N5210
Base Product Number: 2N5210
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Singapore
Through-Hole 50V 100mA 30MHz Bipolar Transistor
276-2N5210BU
Through-Hole 50V 100mA 30MHz Bipolar Transistor 276-2N5210BU
NPN BJT Transistor, 50V, 100mA, 30MHz, TO-92, Through Hole Product overview: 2N5210BU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 100mA, 30MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 100mA, 30MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5210BU can be used for catalog matching and distributor lookup.

NPN BJT Transistor, 50V, 100mA, 30MHz, TO-92, Through Hole Product overview: 2N5210BU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 100mA, 30MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 100mA, 30MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5210BU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5210BU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5210BU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5210BU
TRANS NPN 50V 0.1A TO-92

TRANS NPN 50V 0.1A TO-92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5210-ND 1325653-2N5210BU 276-2N5210BU 2N5210BU
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Through-Hole 50V 100mA 30MHz Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-226-3, TO-92-3 (TO-226AA)
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 200 dB
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