The 2N5195G is a silicon PNP power transistor designed for power amplifier and switching applications, housed in a TO-225 case. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a maximum power dissipation of 40 W at 25 °C. The thermal resistance from junction to case is 3.12 °C/W. The operating and storage junction temperature range is -65 °C to +150 °C. The DC current gain ranges from 7.0 to 80 at a collector current of 4.0 A and collector-emitter voltage of 2.0 V. The collector-emitter saturation voltage is up to 1.4 V at a collector current of 4.0 A and base current of 1.0 A. The transition frequency is 2.0 MHz. The device is RoHS compliant and Pb-free.
Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2MHz; DC Current Gain hFE Min:80hFE; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 28AC7842 |
| Product Name | Transistor Polarity Onsemi |
| Transistor Type | Transistor Polarity Onsemi |
