The 2N5192G is a silicon NPN power transistor for use in power amplifier and switching circuits, rated for 80 V collector-emitter voltage and 4.0 A continuous collector current. It dissipates 40 W at 25°C case temperature with a thermal resistance of 3.12 °C/W. Housed in a TO-225 case (77-09), it operates from -65°C to +150°C. DC current gain ranges from 20 to 80 at IC = 1.5 A and VCE = 2.0 V, with a collector-emitter saturation voltage of up to 1.4 V at IC = 4.0 A and IB = 1.0 A. Current gain-bandwidth product is 2.0 MHz at IC = 1.0 A. The device is Pb-free and RoHS compliant, and meets UL 94 V-0 flammability standards.
BIPOLAR TRANSISTOR, NPN, 80V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 26AC6363 |
| Product Name | Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi |
| Polarity | NPN |
| Package Type | TO-3 |
| IC(max) | 4000 milliamps |
