The 2N4923G is an NPN silicon transistor designed for driver, switching, and amplifier applications, available in a TO-225 case with a thermopad construction for enhanced power dissipation. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a peak collector current of 3.0 A. The device dissipates up to 30 W at 25°C, derating at 0.24 mW/°C above this temperature. Junction temperature ranges from -65°C to +150°C, with a thermal resistance from junction to case of 4.16 °C/W. The current gain ranges from 10 to 150 at IC = 1.0 A and VCE = 1.0 V, with a collector-emitter saturation voltage of 0.6 V and a base-emitter saturation voltage of 1.3 V. The current gain-bandwidth product is 3.0 MHz. The part is Pb-free and RoHS compliant.
BIPOLAR TRANSISTOR, NPN, 80V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 26AC6360 |
| Product Name | Bipolar Transistor, Npn, 80V To-225; Transistor Polarity Onsemi |
| Polarity | NPN |
| Package Type | TO-3 |
| IC(max) | 3000 milliamps |
