onsemi Transistor 2N4920

Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
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Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Transistor - 68117168 - Radwell International
Willingboro, NJ, United States
Transistor
68117168
Transistor 68117168
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - 2N4920 - 197465-2N4920 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N4920
197465-2N4920
TRANSISTORS - Transistors (BJT) - Single - 2N4920 197465-2N4920
Manufacturer: ON Semiconductor Win Source Part Number: 197465-2N4920 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 30 @ 500mA, 1V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 197465-2N4920
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 600mV @ 100mA, 1A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 30 @ 500mA, 1V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT - 2N4920 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
2N4920
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT 2N4920
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT

Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 68117168 197465-2N4920 2N4920
Product Name Transistor TRANSISTORS - Transistors (BJT) - Single - 2N4920 Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
Polarity PNP; PNP
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