PNP BJT Transistor, 40V, 1A, 30W, TO-225 Product overview: 2N4918G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1A, 30W. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 1A, 30W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N4918G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 40V 1A 3MHz 30W Through Hole TO-126
Manufacturer: ON Semiconductor
Win Source Part Number: 133737-2N4918G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 600mV @ 100mA, 1A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 30 @ 500mA, 1V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Bipolar Transistors - BJT 3A 40V 30W PNP
TRANS PNP 40V 1A TO126
TRANSISTOR, PNP, -40V, -3A, TO-225-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:3MHz; Power Dissipation Pd:30W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes
POWER BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-225AA, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors |
| Product Number | 276-2N4918G | 2N4918GOS-ND | 133737-2N4918G | 2N4918G | 2N4918G | 46AC2101 | 18716347 |
| Product Name | 40V 1A 30W Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - 2N4918G | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Pnp, -40V, -3A, To-225-3; Transistor Polarity Onsemi | Transistor |
| Polarity | PNP | PNP | PNP; PNP | PNP | |||
| IC(max) | 3000 milliamps | 1000 milliamps | |||||
| VCEO | 40 volts | 40 volts | |||||
| VCBO | 40 volts | ||||||
| fT | 3 MHz |
