onsemi TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G 2N3906RL1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005702-2N3906RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 005702-2N3906RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
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TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G - 005702-2N3906RL1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G
005702-2N3906RL1G
TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G 005702-2N3906RL1G
Manufacturer: ON Semiconductor Win Source Part Number: 005702-2N3906RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005702-2N3906RL1G
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2N3906RL1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3906RL1GOSTR-ND
Single Bipolar Transistors 2N3906RL1GOSTR-ND
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3906RL1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3906RL1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3906RL1G
TRANS PNP 40V 0.2A TO92

TRANS PNP 40V 0.2A TO92

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 005702-2N3906RL1G 2N3906RL1GOSTR-ND 2N3906RL1G
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP
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