onsemi TRANSISTORS - Transistors (BJT) - Single - 2N3906RL1G 2N3906RL1G

Manufacturer: ON Semiconductor
Win Source Part Number: 005702-2N3906RL1G
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

PNP BJT Transistor, 40V, 200mA, 250MHz, TO-92 Product overview: 2N3906RL1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 200mA, 250MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 200mA, 250MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3906RL1G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92 (TO-226)