onsemi Single Bipolar Transistors 2N3904RLRPG

Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N3904RLRPGOSTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3904RLRPGOSTB-ND
Single Bipolar Transistors 2N3904RLRPGOSTB-ND
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG - 1003877-2N3904RLRPG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG
1003877-2N3904RLRPG
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG 1003877-2N3904RLRPG
Manufacturer: ON Semiconductor Win Source Part Number: 1003877-2N3904RLRPG Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 1003877-2N3904RLRPG
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3904RLRPG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3904RLRPG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3904RLRPG
TRANS NPN 40V 0.2A TO92

TRANS NPN 40V 0.2A TO92

Supplier's Site
TRANS NPN 40V 0.2A TO-92 - 598-2N3904RLRPG - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 40V 0.2A TO-92
598-2N3904RLRPG
TRANS NPN 40V 0.2A TO-92 598-2N3904RLRPG
TRANS NPN 40V 0.2A TO-92

TRANS NPN 40V 0.2A TO-92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors
Product Number 2N3904RLRPGOSTB-ND 1003877-2N3904RLRPG 2N3904RLRPG 598-2N3904RLRPG
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN 40V 0.2A TO-92
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3
Packing Method Tape Reel; Cut Tape (CT),Tape & Box (TB)
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