onsemi Single Bipolar Transistors 2N3904RLRPG

Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N3904RLRPGOSTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3904RLRPGOSTB-ND
Single Bipolar Transistors 2N3904RLRPGOSTB-ND
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG - 1003877-2N3904RLRPG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG
1003877-2N3904RLRPG
TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG 1003877-2N3904RLRPG
Manufacturer: ON Semiconductor Win Source Part Number: 1003877-2N3904RLRPG Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 1003877-2N3904RLRPG
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Buy Now Datasheet
TRANS NPN 40V 0.2A TO-92 - 598-2N3904RLRPG - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 40V 0.2A TO-92
598-2N3904RLRPG
TRANS NPN 40V 0.2A TO-92 598-2N3904RLRPG
TRANS NPN 40V 0.2A TO-92

TRANS NPN 40V 0.2A TO-92

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3904RLRPG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3904RLRPG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3904RLRPG
TRANS NPN 40V 0.2A TO92

TRANS NPN 40V 0.2A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors
Product Number 2N3904RLRPGOSTB-ND 1003877-2N3904RLRPG 598-2N3904RLRPG 2N3904RLRPG
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRPG TRANS NPN 40V 0.2A TO-92 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3
Transistor Technology / Material SILICON
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