onsemi Single Bipolar Transistors 2N3904RL1G

Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N3904RL1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3904RL1GOSTR-ND
Single Bipolar Transistors 2N3904RL1GOSTR-ND
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Singapore
40V 200mA 300MHz Bipolar Transistor
276-2N3904RL1G
40V 200mA 300MHz Bipolar Transistor 276-2N3904RL1G
NPN BJT Transistor, TO-92, 40V, 200mA, 300MHz Product overview: 2N3904RL1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 200mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 200mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3904RL1G can be used for catalog matching and distributor lookup.

NPN BJT Transistor, TO-92, 40V, 200mA, 300MHz Product overview: 2N3904RL1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 200mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 200mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3904RL1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N3904RL1G - 803183-2N3904RL1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3904RL1G
803183-2N3904RL1G
TRANSISTORS - Transistors (BJT) - Single - 2N3904RL1G 803183-2N3904RL1G
Manufacturer: ON Semiconductor Win Source Part Number: 803183-2N3904RL1G Packaging: Reel Mounting Style: Through Hole Power - Max: 625mW Transistor Type: NPN Frequency - Transition: 300MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Current - Collector (Ic) (Maximum): 200mA Voltage - Collector Emitter Breakdown (Maximum): 40V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 5mA, 50mA Part Number Series: 2N3904 DC Current Gain (hFE) (Min) at Ic, Vce: 100 at 10mA, 1V

Manufacturer: ON Semiconductor
Win Source Part Number: 803183-2N3904RL1G
Packaging: Reel
Mounting Style: Through Hole
Power - Max: 625mW
Transistor Type: NPN
Frequency - Transition: 300MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 200mA
Voltage - Collector Emitter Breakdown (Maximum): 40V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 300mV at 5mA, 50mA
Part Number Series: 2N3904
DC Current Gain (hFE) (Min) at Ic, Vce: 100 at 10mA, 1V

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3904RL1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3904RL1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3904RL1G
TRANS NPN 40V 0.2A TO92

TRANS NPN 40V 0.2A TO92

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 2N3904RL1GOSTR-ND 276-2N3904RL1G 803183-2N3904RL1G 2N3904RL1G
Product Name Single Bipolar Transistors 40V 200mA 300MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2N3904RL1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3
IC(max) 200 milliamps 200 milliamps
VCEO 40 volts 40 volts
VCBO 60 volts
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