onsemi Single Bipolar Transistors 2N3859A

Description
Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N3859A-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3859A-ND
Single Bipolar Transistors 2N3859A-ND
Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
Singapore
60V 500mA 250MHz Bipolar Transistor
276-2N3859A
60V 500mA 250MHz Bipolar Transistor 276-2N3859A
NPN BJT Transistor 60V 500mA 250MHz TO-92 Product overview: 2N3859A from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 500mA, 250MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 500mA, 250MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3859A can be used for catalog matching and distributor lookup.

NPN BJT Transistor 60V 500mA 250MHz TO-92 Product overview: 2N3859A from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 500mA, 250MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 500mA, 250MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3859A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N3859A - 1003868-2N3859A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3859A
1003868-2N3859A
TRANSISTORS - Transistors (BJT) - Single - 2N3859A 1003868-2N3859A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1003868-2N3859A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1003868-2N3859A
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3859A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3859A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3859A
TRANS NPN 60V 0.5A TO92-3

TRANS NPN 60V 0.5A TO92-3

Supplier's Site
Transistor -  - Radwell International
Willingboro, NJ, United States
Transistor
Transistor
FAIRCHILD SEMICONDUCTOR Semiconductors 2N3859A

FAIRCHILD SEMICONDUCTOR Semiconductors 2N3859A

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number 2N3859A-ND 276-2N3859A 1003868-2N3859A 2N3859A
Product Name Single Bipolar Transistors 60V 500mA 250MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2N3859A Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor
Polarity NPN NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3
IC(max) 500 milliamps 500 milliamps
VCEO 60 volts 60 volts
VCBO 60 volts
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