The 2N2219A is an NPN bipolar junction transistor designed for medium-power amplification and switching applications with continuous collector currents up to 500 mA. It is packaged in a TO-226AE case weighing 0.300 g. The device has a collector-emitter voltage rating of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 6.0 V. It can dissipate up to 1.0 W with a thermal resistance from junction to ambient of 50 °C/W. The operating and storage junction temperature range is -55 °C to +150 °C. It meets AEC-Q200 qualification and complies with RoHS requirements.
Bipolar (BJT) Transistor NPN 40V 800mA 800mW Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N2219AFS-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
