onsemi TRANSISTORS - RF Transistors (BJT) - 15GN01CA-TB-E 15GN01CA-TB-E

Manufacturer: ON Semiconductor
Win Source Part Number: 1001577-15GN01CA-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.5GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 8V
Typical Gain (hFE) (Min): 200 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

RF Transistor, NPN Single CP, 8 V, 50 mA, fT=1.5 GHz, SC-59 / CP, 3000-REEL Product overview: 15GN01CA-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8 V, 50 mA, 1.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 8 V, 50 mA, 1.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-15GN01CA-TB-E can be used for catalog matching and distributor lookup.

RF Small Signal Bipolar Transistor

RF Transistor NPN 8V 50mA 1.5GHz 200mW Surface Mount 3-CP