The TIP35C is an NPN silicon power transistor designed for amplifier and switching applications in a TO-247 package. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 25 A, and a peak collector current of 40 A. The device dissipates up to 125 W at +25°C with a junction-to-case thermal resistance of 1.0°C/W. The DC current gain is 15 to 75 at a collector current of 15 A, and the collector-emitter saturation voltage is 4.0 V at 25 A collector current and 5 A base current. The base-emitter on voltage is 4.0 V at 25 A collector current. The operating junction temperature range is -65°C to +150°C, and the storage temperature range is also -65°C to +150°C.
TRANS NPN 100V 25A TO218 Product overview: TIP35C from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 25A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 25A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TIP35C can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-TIP35C |
| Product Name | 100V 25A Bipolar Transistor |
| Package Type | Bag |
